Micro Elements Transfer Device and Method

ABSTRACT

A device configured to transfer a micro element includes: a pick-up head array configured to selectively pick up or release the micro element, and including a plurality of pick-up heads; and a test circuit having a plurality of sub-test circuits, each sub-test circuit corresponding to one pick-up head among the plurality of pick-up heads, and having at least two test electrodes for simultaneous testing of photoelectric parameters of the micro element when the transfer device transfers the micro element.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of, and claims priority to,U.S. patent application Ser. No. 15/871,982 filed on Jan. 16, 2018,which a continuation of, and claims priority to, PCT/CN2016/104869 filedon Nov. 7, 2016, which claims priority to Chinese Patent Application No.201610961364.5 filed on Nov. 4, 2016. The disclosures of theseapplications are hereby incorporated by reference in their entirety.

BACKGROUND

Micro element technologies refer to integrate micro-size element arraysin high density over the substrate. At present, the micro light emittingdiode (Micro LED) technique is becoming a hot research topic, and theindustry circle expects high-quality micro element products in themarket. High-quality micro light emitting diode products have profoundimpacts on conventional display products in the market, such asLCD/OLED.

During fabrication of the micro element, at first, a micro element isformed over the donor substrate, and then the micro element istransferred to the acceptor substrate. For example, the acceptorsubstrate is a display screen.

SUMMARY

The inventors of the present disclosure have recognized that, onedifficulty during micro element fabrication is: how to transfer themicro element from the donor substrate to the acceptor substrate.

In conventional micro element transfer, the micro element is transferredto the acceptor substrate through a transfer substrate via waferbonding. Direct transfer is a kind of method by directly bonding themicro element array to the acceptor substrate from the transfersubstrate, and then removing the transfer substrate. Indirect transferis the other method. This method includes two times ofbonding/lifting-off steps. At first, the transfer substrate extracts themicro element array from the donor substrate, and bonds the microelement array to the acceptor substrate. Finally, remove the transfersubstrate. The micro element array is generally extracted byelectrostatic method. During electrostatic extraction, a transfer headarray is required.

Embodiments of the present disclosure provide a transfer device of microelement with a test circuit, to test micro elements and removeunqualified micro elements during transfer.

In an aspect: a transfer device of micro element is provided, including:a base substrate, having two surfaces opposite to each other; a pick-uphead array, formed over the first surface of the base substrate forpicking up or releasing the micro element; a test circuit set insideor/on the surface of the base substrate, which has a series of sub-testcircuits, each sub-test circuit at least having two test electrodes forsimultaneous test of photoelectric parameters of the micro element whenthe transfer device transfers the micro element.

In some embodiments, at least one test electrode of each sub-testcircuit is formed over the surface of the pick-up head for contactingwith the micro element, and for connecting the micro element electrodewhen the pick-up head array contacts with the micro element.

In some embodiments, the test circuit also comprises a retractableelectrode located on the first surface of the base substrate, whichforms a sub-test circuit together with the test electrode formed overthe surface of the pick-up head for contacting with the micro element,which can be applied in micro elements with electrodes at differentsides, such as a vertical micro light emitting diode.

In some embodiments, the transfer device also comprises a CMOSintegrated circuit over the second surface of the base substrate, whichconnects to the test circuit.

In some embodiments, the base substrate has a through-hole structure,wherein, the test circuit passes through the through-hole structure andextends to the second surface of the base substrate.

In some embodiments, the base substrate is a Si substrate, and the CMOSintegrated circuit is formed by a portion of the Si substrate.

In some embodiments, the CMOS integrated circuit is a structure layerformed over the base substrate.

In some embodiments, the pick-up head array picks up the micro elementthrough electrostatic force, Van der Waals force and vacuum adsorptionforce.

In some embodiments, the pick-up head has a static electrode layer and adielectric layer on the electrode layer, wherein, when the electrodelayer applies absorption voltage, the pick-up head produces staticattraction force to pick up the micro element contact therewith.

In some embodiments, the surface of each pick-up head of the pick-uphead array is made of biomimetic gecko material to absorb the microelement by virtue of absorption capacity of the biomimetic geckomaterial.

In some embodiments, the pick-up head array is a series of suctionnozzle arrays, which absorb or release the micro element through vacuumpressure. In an embodiment, the transfer device also comprises a cavity,a plurality of vacuum paths and a switch component, wherein, the suctionnozzle array is connected to the cavity via a plurality of vacuum paths,and valves are set at the connection place for switching on/off. Theswitch component is used for controlling on or off of the valve of eachvacuum path so that the suction nozzle is controlled to absorb orrelease required micro element through vacuum pressure.

In some embodiments, the switch component comprises a CMOS integratedcircuit and an address electrode array connected to the CMOS integratedcircuit, wherein, each vacuum path valve corresponds to the addresselectrode array.

In some embodiments, the valve is a movable member, wherein, the addresselectrode array is under selective excitation by the CMOS integratedcircuit with voltage potential to generate electrostatic attraction,through which, corresponding movable member would deflect or approach tocorresponding address electrode, thus controlling opening or closing ofeach vacuum path.

In some embodiments, the vacuum path is a series of micro-holestructures passing through the base substrate, wherein, one end isconnected to the cavity, and the other is connected to the suctionnozzle.

In some embodiments, the pick-up head size is below 100 μm, and thespace is below 200 μm.

Various embodiments of the present disclosure also provide a transfermethod for prior removal of micro element defects, comprising: providinga transfer device, which comprises a base substrate, a pick-up headarray formed over the surface of the base substrate and a test circuitinside or/and on the surface of the base substrate, wherein, the testcircuit has a series of sub-test circuits, each sub-test circuit havingat least two test electrodes; positioning the transfer device on themicro element connected to the carrier substrate so that the testelectrode contacts with the micro element; applying test voltage on thetest circuit to form a test hoop for testing the micro element andobtaining defect pattern of the micro element of the carrier substrate.

In some embodiments, a transfer method for prior removal of microelement defects is disclosed, comprising: (1) providing a transferdevice, which comprises a base substrate, a pick-up head array formedover the surface of the base substrate and a test circuit inside or/andon the surface of the base substrate, wherein, the test circuit has aseries of sub-test circuits, each sub-test circuit having at least twotest electrodes; (2) positioning the transfer device on the microelement connected to the carrier substrate; (3) contacting the testelectrode with the micro element electrode, and applying test voltage onthe test circuit to form a test hoop for testing the micro element andobtaining defect pattern of the micro element of the carrier substrate;(4) picking up qualified micro elements over the carrier substrate withthe pick-up head array of the transfer device; and (5) releasingrequired micro elements on the acceptor substrate.

In some embodiments, a transfer method for prior removal of microelement defects is disclosed, comprising: (1) providing a transferdevice, which comprises a base substrate, a pick-up head array formedover the surface of the base substrate and a test circuit inside or/andon the surface of the base substrate, wherein, the test circuit has aseries of sub-test circuits, each sub-test circuit having at least twotest electrodes; (2) positioning the transfer device on the microelement connected to the carrier substrate; (3) contacting the testelectrode with the micro element electrode, and applying test voltage onthe test circuit to form a test hoop for testing the micro element andobtaining defect pattern of the micro element of the carrier substrate;(4) picking up unqualified micro elements over the carrier substratewith the pick-up head array of the transfer device; and (5) releasingunqualified micro elements on the acceptor substrate.

In some embodiments, a transfer method for prior removal of microelement defects is disclosed, comprising: (1) providing a transferdevice, which comprises a base substrate, a pick-up head array formedover the surface of the base substrate and a test circuit inside or/andon the surface of the base substrate, wherein, the test circuit has aseries of sub-test circuits, each sub-test circuit having at least twotest electrodes; (2) positioning the transfer device on the microelement connected to the carrier substrate; (3) contacting the testelectrode with the micro element electrode, and applying test voltage onthe test circuit to form a test hoop for testing the micro element andobtaining defect pattern of the micro element of the carrier substrate;(4) picking up micro elements over the carrier substrate with thepick-up head array of the transfer device; and (5) releasing unqualifiedand qualified micro elements onto different acceptor substratesrespectively.

In some embodiments, a transfer method for prior removal of microelement defects is disclosed, comprising: (1) providing a transferdevice, which comprises a base substrate, a pick-up head array formedover the surface of the base substrate and a test circuit inside or/andon the surface of the base substrate, wherein, the test circuit has aseries of sub-test circuits, each sub-test circuit having at least twotest electrodes; (2) positioning the transfer device on the microelement connected to the carrier substrate; (3) picking up the microelements of the carrier substrate with the pick-up head array of thetransfer device; (4) releasing the micro elements on the first acceptorsubstrate; (5) contacting the test electrode of the transfer device withthe micro element electrode, and applying test voltage on the testcircuit to form a test hoop for testing the micro element and obtainingdefect pattern of the micro element of the first acceptor substrate; (6)picking up unqualified micro elements on the first acceptor substratewith the pick-up head array of the transfer device; and (7) releasingunqualified micro elements on the second acceptor substrate.

In some embodiments, the pick-up head array can pick up the microelement through electrostatic force, Van der Waals force and vacuumadsorption force.

According to another embodiment of the present invention, a method forfabricating a micro element device is provided, comprising the transferof the micro element to the receiving substrate of the micro elementdevice through the method disclosed in the present invention.

According to another embodiment of the present invention, a microelement device fabricated according to the method disclosed in thepresent invention is provided.

According to another embodiment of the present invention, an electronicdevice comprising the micro element device of the present invention isprovided.

In some embodiments, the method above can further include: (4) using thepick-up array of the transfer device to pick up micro elements on thecarrier substrate; (5) releasing unqualified and qualified microelements on different acceptor substrates.

In another aspect, a transfer method of micro element is provided, themethod including: (1) providing a transfer device, which comprises abase substrate, a pick-up head array formed over the surface of the basesubstrate and a test circuit inside or/and on the surface of the basesubstrate, wherein, the test circuit has a series of sub-test circuits,each sub-test circuit having at least two test electrodes; (2)positioning the transfer device on the micro element connected to thecarrier substrate; (3) using the pick-up array of the transfer device topick up micro elements on the carrier substrate; (4) releasing microelements on the first acceptor substrate; (5) contacting the testelectrode of the transfer device with the micro element electrode toapply test voltage on the test circuit to form a test loop for testingthe micro element and obtaining defect pattern of the micro element ofthe first acceptor substrate; (6) using the pick-up array of thetransfer device to pick up unqualified micro elements on the firstacceptor substrate; (7) releasing unqualified micro elements on thesecond acceptor substrate.

In another aspect, a method for fabricating a micro element device, isprovided, including any of micro element transfer method with priorremoval of defects as described above.

In another aspect, a micro element device fabricated according to themethod above is provided.

In another aspect, an electronic device including the micro elementdevice described above is provided.

The other features and advantages of this present disclosure will bedescribed in detail in the following specification, and it is believedthat such features and advantages will become more obvious in thespecification or through implementations of this invention. The purposesand other advantages of the present disclosure can be realized andobtained in the structures specifically described in the specifications,claims and drawings.

In addition, it should be understood by those skilled in the art thatdespite many problems in the prior art, the technical scheme of eachembodiment or claim of the present invention can be improved in one orseveral aspects. It is not necessary to solve all technical problemslisted in the prior art or the background art. It should be understoodby those skilled in the art that contents not mentioned in a claim shallnot be construed as limiting the claim.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and constitute a part of thisspecification, together with the embodiments, are therefore to beconsidered in all respects as illustrative and not restrictive. Inaddition, the drawings are merely illustrative, which are not drawn toscale.

FIG. 1 is a side sectional view of a transfer device of micro elementaccording to a first embodiment of the present disclosure.

FIG. 2 is a schematic diagram showing that voltage is applied on theelectrode layer of the pick-up head of the transfer device as shown inFIG. 1 to produce statistic absorption force.

FIG. 3 is a schematic diagram showing that voltage is applied on thetest circuit of the transfer device as shown in FIG. 1 to form a testhoop.

FIG. 4 is a side sectional view of a transfer device of micro elementaccording to a second embodiment of the present disclosure.

FIG. 5 is a schematic diagram showing that voltage is applied on thetest circuit of the transfer device as shown in FIG. 4 to test the microelement.

FIG. 6 is a schematic diagram showing that voltage is applied on theelectrode layer of the pick-up head of the transfer device as shown inFIG. 4 to produce statistic absorption force.

FIG. 7 is a side sectional view of a transfer device of micro elementaccording to a third embodiment of the present disclosure.

FIG. 8 is a schematic diagram showing that voltage is applied on thetest circuit of the transfer device as shown in FIG. 7 to test the microelement.

FIG. 9 is a schematic diagram showing that voltage is applied on theelectrode layer of the pick-up head of the transfer device as shown inFIG. 7 to produce statistic absorption force.

FIG. 10 is a side sectional view of a transfer device of micro elementaccording to a fourth preferred embodiment, wherein the surface of thepick-up head 4120 has a micro nanometer-composite rigid villi structure.

FIG. 11 is a SEM diagram of the rigid villi structure of the microelement transfer device as shown in FIG. 10.

FIG. 12 is a side section view of a transfer device of micro elementaccording to a fifth preferred embodiment.

FIG. 13 is a first schematic diagram illustrating the vacuum path valveof the micro element the transfer device.

FIG. 14 is a second schematic diagram illustrating the vacuum path valveof the micro element the transfer device.

FIG. 15 is a third schematic diagram illustrating the vacuum path valveof the micro element the transfer device.

FIG. 16 is a cross-section view of FIG. 14 along line A-A.

FIG. 17 is a cross-sectional view of FIG. 14 along line B-B, in whichthe vacuum path is OFF.

FIG. 18 is a cross-sectional view of FIG. 14 along line B-B, in whichthe vacuum path is ON.

FIG. 19 is a flow chart illustrating prior removal of defects of a microelement during transfer according to the present invention.

FIG. 20 is a flow chart illustrating the transfer method of the microelement according to a sixth preferred embodiment.

FIG. 21 illustrates a first step of the transfer method of the microelement according to the sixth embodiment.

FIG. 22 illustrates a second step of the transfer method of the microelement according to the sixth embodiment.

FIG. 23 illustrates a third step of the transfer method of the microelement according to the sixth embodiment.

FIG. 24 illustrates a fourth step of the transfer method of the microelement according to the sixth embodiment.

FIG. 25 is flow chart illustrating the transfer method of the microelement according to a seventh embodiment.

FIG. 26 illustrates a first step of the transfer method of the microelement according to the seventh embodiment.

FIG. 27 illustrates a second step of the transfer method of the microelement according to the seventh embodiment.

FIG. 28 is flow chart illustrating the transfer method of the microelement according to an eighth embodiment.

FIG. 29 illustrates a first step of the transfer method of the microelement according to the eighth embodiment.

FIG. 30 illustrates a second step of the transfer method of the microelement according to the eighth embodiment.

FIG. 31 illustrates a third step of the transfer method of the microelement according to the eighth embodiment.

FIG. 32 is a flow chart illustrating the transfer method of the microelement according to a ninth embodiment.

FIG. 33 illustrates a first step of the transfer method of the microelement according to the ninth embodiment.

FIG. 34 illustrates a second step of the transfer method of the microelement according to the ninth embodiment.

FIG. 35 illustrates a third step of the transfer method of the microelement according to the ninth embodiment.

FIG. 36 illustrates a fourth step of the transfer method of the microelement according to the ninth embodiment.

FIG. 37 illustrates a fifth step of the transfer method of the microelement according to the ninth embodiment.

In the drawings: 1100, 2100, 3100, 4100, 5100: transfer device; 1110,2110, 3110, 4110, 5110: base substrate; 1110A: first surface of the basesubstrate; 1110B: second surface of the base substrate; 1120, 2120,3120, 4120, 5120: pick-up head; 1120A: surface of the pick-up head forcontacting with the micro element; 1122, 2122, 3122: electrostaticcircuit connecting line of the pick-up head; 1124, 2124, 3124: electrodelayer of the pick-up head; 1126, 2126, 3126: dielectric layer; 1132A,1132B, 2132A, 2132B, 3132, 4132A, 4132B, 5132A, 5132B: circuit; 1134A,1134B, 2134A, 2134B, 3134, 4134A, 4134B, 5134A, 5134B: test electrode;2136, 3136: retractable electrode; 1140, 2140, 3140, 4140: CMOSintegrated circuit; 1200, 2200, 3200: micro element; 1220A, 1220B, 3220:micro element electrode; 1300, 2300, 3300: carrier substrate; 1310,2310, 3310: middle layer; 1140, 2140, 3140, 4140: CMOS integratedcircuit; 5138: insulating protective layer; 5150: through hole/vacuumpath; 5152: valve/movable member; 5154: carrier layer; 5160: cavity;5170: CMOS integrated circuit; 5172: address electrode layer; 5174:address electrode.

DETAILED DESCRIPTION

This embodiment describes a micro element transfer device and method fortransferring a micro element with the transfer device. The micro elementarray can be a micro LED device, a diode, a transistor, an integratedchip (IC), with size of 1-100 μm, which is not limited to this size. Inaddition, some aspects of the embodiment may apply to larger or smallersizes. The embodiments below describe a micro element transfer deviceand method for transferring a micro element with the transfer device.The transfer device has a pick-up head array for picking up or releasingthe micro element, and size (such as length or width) of each pick-uphead is 1-100 μm. The transfer device also has a test circuit, and eachpick-up head corresponds to a sub-test circuit. When the pick-up headcontacts with the micro element, voltage is applied on the test circuitto form a test hoop for photoelectric performance test of the microelement. Therefore, defect pattern of the defect micro element isobtained to remove defect micro elements during micro element arraytransfer.

FIG. 1 is a side section view of a transfer device according to thefirst preferred embodiment of the present invention. The transfer device1100 comprises: a base substrate 1110, an array of pick-up head 1120, atest circuit and a CMOS integrated circuit 1140. Specifically, the basesubstrate 1110 is for supporting, which can be made of a variety ofmaterials, such as Si, ceramics and polymer. The pick-up head 1120 isformed over the first surface 1110A of the base substrate 1110 in anarray arrangement. The size range is 1 _(μm-)100 μm, and the size, forexample, can be 50 μm-20 μm. The pitch is (1 μm-100μm)×(1 μm-100 μm),such as 10 μm×10 μm or 50 μm×100 μm. The array of pick-up head 1120 islocated on the first surface 1110A of the base substrate 1100 forpicking up the micro element through various adsorption forces (such aselectrostatic force, vacuum pressure, Van der Waals force, magneticforce and the like) for print transfer. In some embodiments, eachpick-up head can be independently controllable for selective pick-up andrelease of the micro element. The test circuit is composed of a seriesof sub-test circuits, each sub-test circuit corresponding to a pick-uphead 1120, and having at least two test electrodes 1134A and 1134B,wherein, the sub-test circuit is connected to the working electronicdevice of the test module such as CMOS integrated circuit 1140 via thecircuits 1132A and 1132B.

In this embodiment, the array of pick-up head 1120 picks up and releasesthe micro element through electrostatic force, wherein, each pick-uphead 1120 corresponds to an electrostatic adsorption circuit, comprisinga connection circuit 1122 and an electrode layer 1124, wherein, theconnection line 1122 can go through the base substrate 1110, and connectto the CMOS integrated circuit 1140 so as to connect to externalelectronic control piece. The surface of the electrode layer 1124 iscovered with a dielectric layer 1126. Thus, when absorption voltage isapplied on the electrode layer 1124, electrostatic adsorption force isformed to pick up the micro element, as shown in FIG. 2.

The test circuit of the transfer device 1100 is composed of a series ofsub-test circuits, and each pick-up head 1120 corresponds to a sub-testcircuit, which is composed of test electrodes 1134A, 1134B and circuits1132A, 1132B. A pair of through-hole structures are formed at a place ofthe base substrate 1110 approaching the pick-up head 1120, and thethrough holes are filled with conductive materials to form circuits1132A and 1132B to connect the test electrodes 1134A, 1134B to the CMOSintegrated circuit 1140 on the second surface 1100B of the basesubstrate. The test electrodes 1134A and 1134B are embedded in thedielectric layer 1126, and the lower surface is parallel with the lowersurface of the dielectric layer 1126. At this time, the surface 1120A ofthe pick-up head 1120 for contacting with the micro element is composedof test electrodes 1134A, 1134B and the dielectric layer 1126, as shownin FIG. 1. When the surface 1120A of the pick-up head 1120 contacts withthe micro element, the test electrode 1134A contacts with the microelement electrode 1220A, and the test electrode 1134B contacts with themicro element electrode 1220B.

The transfer device 1100 of this embodiment mainly targets at microelements 1200 with electrodes at same side (for example, micro lightemitting diode with electrodes at same side), and the test electrodes1134A and 1134B are formed on the surface 1120A of the pick-up head 1120for contacting with the micro element. Before transferring the microelement 1200 with the transfer device 1100, the micro element 1200 isgenerally placed on the carrier substrate 1300 (a middle layer 1310 canbe set between them, but is not necessarily required), wherein,electrodes 1220A and 1220B are generally placed upwards. When thepick-up head 1120 of the transfer device 1100 aligns with the contactmicro element 1200, the test electrode 1134A contacts with the microelement electrode 1220A, and the test electrode 1134B contacts with themicro element electrode 1220B. When test voltage is applied on testelectrodes 1134A and 1134B through circuits 1132A and 1132B, a test hoopis formed, as shown in FIG. 3 to realize photoelectric parameter testfor the micro element. Thus, the micro elements are tested duringtransferring for prior removal of defect micro elements.

FIG. 4 is a side section view of a transfer device according to thesecond preferred embodiment of the present invention. Different from thetransfer device 1100, the transfer device 2100 also has at least aretractable electrode 2136, which forms a sub-test circuit together withthe test electrode 2134B formed over the surface of the pick-up head forcontacting with the micro element, which can be applied for microelements with electrodes at different sides, such as a vertical microlight emitting diode. The retractable electrode 2136 and the pick-uphead 2120 are at the same side, which can be located outside the arrayof the pick-up head 2120, and the lower end 2136A extrudes the lower end2120A of the pick-up head 2120. When the transfer device 2100 is usedfor transferring the vertical micro element, the vertical micro element2200 is placed on the conductive carrier substrate 2300, and the pick-uphead 2120 of the transfer device 2100 orients to and contacts with themicro element 2200, then the test electrode 2034B contacts with the topelectrode 2220 of the micro element 2200, and the retractable electrode2136 contacts with the carrier substrate 2300. FIGS. 5 and 6 showcircuit connections under the test mode and the pick-up mode. Referringto FIG. 5, when the transfer device 2100 tests the micro element, testvoltage connects the test electrode 2134B and the retractable electrode2136, wherein, 2134B connects the top electrode 2220 of the microelement, and the retractable electrode 2136 connects the conductivesubstrate 2300 to form a test hoop to realize test for the micro element2200; referring to FIG. 6, when the transfer device 2100 picks up themicro element, when the absorption voltage connects the electrode layer2124 of the electrostatic circuit, static attraction force is generatedon the surface of the pick-up head 2120 to pick up the micro elementcontacted therewith.

The transfer device of the embodiment can be used for testing andtransfer printing of micro elements with electrodes at same or differentsides (namely, the vertical micro element). When the transfer device isapplied for transferring the vertical micro element, the test electrode2134B and the retractable electrode 2136 form a test circuit; when thetransfer device is applied for transferring horizontal micro elements,the test electrodes 2134B and 2134A form a test circuit. The retractableelectrode 2136 can be used for electrostatic protection.

FIG. 7 is a side section view of a transfer device according to thethird preferred embodiment of the present invention. Different from thetransfer device 2100, the transfer device 3100 is mainly applied forvertical micro elements. In this embodiment, the test circuit issimplified as only one test electrode 3134 forms on the surface of thepick-up head 3120.

FIGS. 8 and 9 show circuit connections under the test mode and thepick-up mode. Referring to FIG. 8, when the transfer device 3100 teststhe micro element, the test voltage connects the test electrode 3134 andthe retractable electrode 3136, wherein, the test electrode 3134connects the top surface electrode 3220 of the micro element, and theretractable electrode 3136 connects to the conductive carrier substrate3300 to form a test hoop for testing the micro element 3200; referringto FIG. 9, when the transfer device 2100 picks up the micro element3200, one end of the external power is directly grounded, and the otherend connects to the electrode layer 3124. Static attraction force isproduced on the surface of the pick-up head 3120 to pick up the microelement contact therewith.

FIG. 10 is a side section view of a transfer device according to thefourth preferred embodiment of the present invention. Different from thetransfer device 1100, the pick-up head 4120 of the transfer device 4100picks up and releases the micro element with Van der Waals force. Inthis embodiment, the surface of the pick-up head 4120 is made ofbiomimetic gecko. When it orients to and contacts with the microelement, the pick-up head absorbs the micro element by virtue ofabsorption capacity of the biomimetic gecko to pick up required microelement, and desorbs the micro element by virtue of desorption capacitythe biomimetic gecko to release the micro element. In this embodiment,the test electrodes 4314A and 4134B are not necessarily to cover thesurface of the pick-up head 4120, but to expose part of the testelectrode on the surface of the pick-up head for contacting with themicro element to the extent that the test electrode can be connected tothe micro element electrode when the pick-up head 4120 contacts themicro element.

Specifically, the pick-up head 4120 is made of biomimetic geckomaterial, which can be silicone rubber, polyurethane, multiwalled carbonnanotube, polyester resin, polyimide, artificial rubber, epoxy resin,polydimethylsiloxane, polyurethane and ethylene glycol terephthalate orpolymethyl methacrylate or any of their combinations. Further, thesurface of the pick-up head 4120 comprises micro nanometer-compositerigid villi structure, as shown in FIG. 11, for example, with protrusiondensity of 1×10⁵-6×10⁸ protrusions per cm². Van der Waals force isproduced when the rigid villi structure made of biomimetic geckomaterial contacts with the micro element surface with adhesiveattraction, which absorbs the micro element to pick up the microelement. In some embodiments, the surface of the rigid villi structurehas hydrophobic nature, which prevents water layer from being formed onthe contact surface, which eliminates possible function of capillaryforce as much as possible, thus playing an important role for narrowinggap and providing Van der Waals force.

FIG. 12 is a side section view of a transfer device according to thefifth preferred embodiment of the present invention. Different from thetransfer device 1100, the pick-up head 5120 of the transfer device 5100is a suction nozzle structure, which picks up and releases the microelement through vacuum pressure adsorption. Specifically, the transferdevice 5100 has a suction nozzle array. Each suction nozzle is connectedto a same cavity 5160 through the vacuum path 5150, and each vacuum pathhas a valve 5152 to control ON/OFF of the vacuum path. Size (for examplelength or width) of each suction nozzle is 1μm-100 μm. Each suctionnozzle is 1-20 μm. Pitch of the suction nozzle array is (1 μm-100 μm)×(1μm-100 μm), for example 10 μm×10 μm or 50 μm×100 μm. To reach such size,each vacuum path can be a series of micro-hole structures formed overthe base substrate 5110 (such as Si substrate). Correspondingly, eachsuction nozzle 5120 corresponds to a vacuum path 5150, a valve 5152 anda switch element. A CMOS storage circuit and an address electrode arraycan be used for providing the switch array with micro size.

Digital micro-mirror device (DMD) is a single chip semiconductor devicewith micro electro mechanical system (MEMS), which generally comprisesarea arrays of bistable state movable micro-mirror for forming imageelements (pixel). The micro-mirror is fabricated in the area arraycorresponding to the addressing memory unit and placed above relatedaddress electrode at the bottom of the micro-mirror, wherein, theaddress electrode is under selective excitation by the control circuitto generate electrostatic attraction causing corresponding micro-mirrorto deflect towards corresponding address electrode. The embodiments,with the principle of DMD chip, a movable member of a micro-mirrorsimilar to the DMD chip is set at the connection position of each vacuumpath and the shared cavity, as a valve, and an associated addresselectrode is fabricated above the movable member, wherein, the addresselectrode is under selective excitation by the control circuit togenerate electrostatic attraction causing corresponding movable memberto deflect towards corresponding address electrode. In this way, themovable member skews or deflects to the address electrode to close oropen the vacuum path, and controls each vacuum path valve via theswitching component for controlling opening or closing of the vacuumpath to extract required micro element.

Referring to FIG. 12, the transfer device 5100 comprises a basesubstrate 5110, a cavity 5160 above the base substrate 5110 and a switcharray above the cavity 5160. Specifically, the base substrate 5110 hasan array of through hole 5150, and a series of suction nozzle structuresare formed at the bottom surface of the base substrate 5110 to serve asthe pick-up head 5120. Conductive layers 5132A and 5132B are formed atthe side wall of the through hole 5150, and extend towards the upper andlower surfaces of the base substrate 5110. Test electrode 5134A and5134B are formed on the lower surface of the base substrate 5110. Covera dielectric layer over the conductive layers 5132A and 5132B as theinsulating protective layer 5138. The conductive layers 5132A, 5132B andthe test electrodes 5134A, 5134B form a test circuit, wherein, afunctional circuit (such as a CMOS integrated circuit, not shown) can beformed inside the base substrate 5110 for connecting the test circuit.In this embodiment, each suction nozzle 5120 is connected to a samecavity 5160 through the through hole 5150. As the vacuum path, eachthrough hole 5150 is used for transmitting vacuum pressure so that thesuction nozzle 5120 can absorb or release the micro element throughvacuum pressure. Further, a valve 5152 is set at the opening of eachthrough hole 5150 for controlling ON/OFF of each vacuum path 5150. Thevalve of each vacuum path is controlled by the switch component so as tocontrol ON or OFF of the vacuum path to pick up required micro element.The switch array is composed of a CMOS storage circuit layer 5170 and anaddress electrode layer 5172 thereunder, wherein, the address electrodelayer 5172 is provided with an array of address electrode 5174, eachaddress electrode 5174 corresponding to a vacuum path 5150.

In this embodiment, the valve 5152 is a member 5152 capable fordeflection at the micro hole structure, wherein, the edge of this memberis not connected to the through hole edge, but connects to the basesubstrate 5110 with a carrier layer 5154. Under electrostatic attractionof the address electrode 5174, the member 5152 deflects taking the pivotas the center, wherein, one end deflects towards the address electrode5174.

FIGS. 13-15 are schematic diagrams of the vacuum path valve. The valvestructure comprises a carrier layer 5154 on the surface of the basesubstrate 5110 and a movable member 5152 on the carrier layer 5154. Thecarrier layer 5154 comprises a frame 5154 a, a pivot 5154 b and anopening 5154 c, wherein, the pivot 5154 b is supported on the frame 5154a and cross the opening 5154 c. The movable member 5152 is supported onthe pivot 5154 b through the hole 5152 a, and can deflect or declinetaking the pivot 5154 b as the center.

FIGS. 16-18 are section views of each suction nozzle of the transferdevice. FIG. 16 is a schematic diagram along line A-A of FIG. 14. Asshown in the figure, in this embodiment, the upper surface of the pivot5154 b is lower than the frame 5154 a, and the component 5152 suspendson the pivot 5154 b. FIGS. 17-18 are schematic diagrams along line A-Aof FIG. 12. As shown in the figure, an address electrode 5174 isarranged above the member 5152. The CMOS memory circuit controls theON/OFF status of the address electrode 5174. When the address electrode5174 is in OFF status, the address electrode 5174 is not excited withvoltage potential so as not to generate electrostatic attraction, andthe member 5152 is not deflected, thus closing the vacuum path 5150, asshown in FIG. 17; when the address electrode 5174 is in ON status, theaddress electrode 5174 is excited with voltage potential to generateelectrostatic attraction. Under electrostatic attraction of the addresselectrode 5174, the edge of the member 5152 deflects on the pivot 5154 band deflects towards the address electrode 5174, thus opening the vacuumpath 5150, as shown in FIG. 18.

FIG. 19 is a flow diagram of defect removal of the micro element throughany of the aforesaid transfer device, which can include steps S110-S130.Brief description is given below.

S110: provide any of the transfer devices. The transfer device comprisesa pick-up head array and a test circuit, wherein, the test circuit iscomposed of a series of sub-test electrodes, and each sub-test circuitcorresponds to a pick-up head. In some embodiments, in general, thedevice comprises two test electrodes, wherein, at least one testelectrode is located over the surface of the pick-up head for contactingwith the micro element, so that when the pick-up head contacts with themicro element, the test electrode injects test current to the microelement.

S120: position the transfer device on the micro element connected to thecarrier substrate. The carrier substrate can be a growth substrate or acarrier substrate; for example, the carrier substrate material can beglass, Si, polycarbonate (PC), acrylonitrile butadiene styrene (ABS) orany of their combination. The micro element can be a micro lightemitting diode, with thickness of about 0.5 μm to about 100 μm. Themicro element can be a cylinder with radius of about 0.5 μm to about 500μm. However, the micro element is not limited to cylinder, but can betriangular column, cube, rectangular, hexagonal column, octagonal columnor other polygonal cylinders.

S130: contact the test electrode of the transfer device with the microelement electrode to apply test voltage on the test circuit to form atest hoop for testing the micro element and obtaining defect pattern ofthe micro element of the carrier substrate. Through the test circuit ofthe transfer device, when the pick-up head array contacts with the microelement, the test electrode connects to the micro element electrode toform a test hoop.

During transferring of the micro element, test the micro element toobtain defect pattern of the micro element for selective pick-up ofqualified micro elements or unqualified micro elements. The embodimentfor a transfer method of micro element for prior removal of defects isdescribed in detail with reference to figures below.

FIG. 20 is a schematic diagram of a transfer method of the micro elementaccording to the sixth preferred embodiment of the present invention,comprises steps S210-S250. For example, S210 includes provide a transferdevice, including pick-up head array and test circuit, test circuitincluding a series of sub-test electrodes, each sub-test circuit havingat least two test electrodes.

S220 includes positioning the transfer device on the micro elementconnected to the carrier substrate.

S230 includes contacting the test electrode of the transfer device withthe micro element electrode to apply test voltage on the test circuit toform a test hoop for testing the micro element and obtaining defectpattern of the micro element of the carrier substrate.

S240 includes using the pick-up head array to pick up acceptable microelements from the carrier substrate

S250 includes releasing the micro elements to the receiving substrate

Referring to FIG. 21, provide a transfer device 1100, and position it onthe micro element 1200 which is connected to the carrier substrate 1300.Brief description is given below taking the transfer device 1100 of thefirst preferred embodiment of the present invention as an example. Placethe micro element on the carrier substrate 1300, with electrodesupwards, and the test electrodes 1134A and 1134B of the transfer device1100 align with the micro element electrodes 1120A and 1120Brespectively. For simplification, the figure only shows four microelements 1201-1204.

Referring to FIG. 22, contact the pick-up head 1120 of the transferdevice with the micro element. The test electrode is connected to themicro element electrode, and applies voltage on both ends of the testelectrode to form a test loop for testing the micro element andobtaining defect patterns of the micro element. For example,photoelectric parameters of the micro element 1204 are qualified, andphotoelectric parameters of the micro element 1201-1203 are notqualified.

Referring to FIG. 23, by controlling the pick-up head array of thetransfer device, selectively pick up qualified micro elements 1201-1203on the carrier substrate 1300. In this embodiment, the micro elementarray has 10 μm interval, wherein, each micro element has 2 μm intervaland 8 μm maximum width. Top surface of each micro element has a widthapproximating to 8 μm, and width of the surface of the correspondingpick-up head for contacting with the micro element is near 8 μm or less,thus avoiding unintentional contact with adjacent micro LED device. Theembodiments of the present invention can be any appropriate sizes, andnot limited to such sizes.

Referring to FIG. 24, release the micro elements 1201-1203 on theacceptor substrate 1400. The acceptor substrate can be automotive glass,glass sheet, flexible electronic substrate, such as flexible film ofpath, display back plate, solar glass, metal, polymer, polymer compoundand glass fiber.

In this embodiment, when the transfer device contacts with the microelement array, the test circuit of the transfer device tests the microelement to obtain defect pattern of the micro element array. Then,selectively pick up qualified micro elements to effectively preventdefect micro elements from transfer-printing to the acceptor substrateof terminal applications such as the display backboard duringtransformation.

FIG. 25 is a flow diagram of a transfer method of the micro elementaccording to the seventh preferred embodiment of the present invention,mainly comprises steps S310-S350, wherein, steps S310-S330 are same assteps S210-S230. Brief description is given below targeting at stepsS340-S350. Referring to FIG. 26, by controlling the pick-up head arrayof the transfer device, selectively pick up unqualified micro elements1204 on the carrier substrate 1300; referring to FIG. 27, releaseunqualified micro elements 1204 on the acceptor substrate 1500. In thisembodiment, the acceptor substrate 1500 can be any recovery device forrecovering and placing the unqualified micro element.

In this embodiment, before transfer of the micro element, at first, testthe micro element array with the test circuit of the transfer device,and transfer it to the recovery device. Therefore, those remained on themicro element of the carrier substrate are qualified products for priorremoval of unqualified micro elements.

FIG. 28 is a flow diagram of a transfer method of the micro elementaccording to the eighth preferred embodiment of the present invention,mainly comprises steps S410-S450, wherein, steps S410-S430 are basicallysame as steps S210-S230. Brief description is given below targeting atsteps S440-S450. Referring to FIG. 29, by controlling the pick-up headarray of the transfer device, selectively pick up the micro elements1201-1204 on the carrier substrate 1300; referring to FIG. 30, bycontrolling, selectively release unqualified micro elements 1204 on thefirst acceptor substrate 1500; referring to FIG. 31, release qualifiedmicro elements 1201-1203 on the second acceptor substrate 1400. In thisembodiment, the first acceptor substrate 1500 can be any recovery devicefor recovering and placing the unqualified micro element; the secondacceptor substrate 1400 can be a flexible electronic substrate, such asa flexible film with a circuit, display back plate, and the like.

In S450 of this embodiment, it is acceptable to release qualified microelements 1201-1203 on the second acceptor substrate 1400 and thenrelease unqualified micro elements 1204 on the first acceptor substrate1500.

FIG. 32 is a flow diagram of a transfer method of the micro elementaccording to the ninth preferred embodiment of the present invention,mainly comprising steps S510-S570, wherein, steps S510-S520 arebasically same as S210-S220. Brief description is given below targetingat steps S530-S570.

Referring to FIG. 33, use the pick-up head array of the transfer deviceto selectively pick up the micro elements 1201-1204 on the carriersubstrate 1300; referring to FIG. 34, release the micro elements1201-1204 on the second acceptor substrate 1400. The pick-up head of thetransfer device keeps contact with the micro element, and the testelectrode of the transfer device contacts with the micro elementelectrode; referring to FIG. 35, apply voltage on the test electrode,and each micro element 1201-1204 forms a sub-test hoop for testing andobtaining the defect pattern of the micro element. For example,photoelectric parameters of the micro element 1201 are unqualified(namely, the defect micro element), and photoelectric parameters of themicro element 1202-1204 are qualified; referring to FIG. 36, use thepick-up head array of the transfer device to selectively pick up thedefect micro element 1201 of the second acceptor substrate 1400;referring to FIG. 37, release the defect micro element 1201 on the firstacceptor substrate 1500, wherein, the first acceptor substrate 1500 canbe any recovery device for recovering and placing the unqualified microelement; and the second acceptor substrate 1400 is a flexible electronicsubstrate, such as a flexible film with a circuit, display back plate,and the like.

The pick-up head arrays according to the above embodiments pick up orrelease micro elements through electrostatic force, Van der Waals forceand vacuum adsorption force. The transfer method of the micro element ofeach embodiment takes the transfer device 1100 disclosed in FIG. 1 as anexample. However, this invention is not limited to this transfer device.For micro elements with different electrode structures, the transferdevices of different structures can be selected.

In the transfer method of the micro element, the micro element arrayscan be tested and transfer printed for several times through thetransfer device.

The transfer method for the micro element according to aforesaidembodiment can also be used for fabricating electronic device, or bewidely applied in electronic devices like mobile phone, tablet PC, andthe like.

Despite the description of exemplary embodiments of the presentinvention, it should be understood that it is not intended to limit thescope of the invention to the particular form set forth. On thecontrary, alternatives and modifications can be made by the personsskilled in the art without departing from the spirit and scope of theinvention as defined by the appended claims.

1. A device configured to transfer a micro element, the devicecomprising: a pick-up head array configured to selectively pick up orrelease the micro element, and including a plurality of pick-up heads;and a test circuit having a plurality of sub-test circuits, eachsub-test circuit corresponding to one pick-up head among the pluralityof pick-up heads, and having at least two test electrodes forsimultaneous testing of photoelectric parameters of the micro elementwhen the transfer device transfers the micro element.
 2. The device ofclaim 1, wherein at least one of the plurality of pick-up heads has asize in a range of 1 μm-100 μm.
 3. The device of claim 1, wherein thepick-up head array has a pitch in a range of (1 μm-100 μm)×(1 μm-100μm).
 4. The device of claim 1, wherein each of the plurality of pick-upheads is independently controllable to selectively pick up or releasethe micro element.
 5. The device of claim 1, further comprising asubstrate having a first surface and an opposing second surface, whereinthe pick-up head array is formed over the first surface of thesubstrate.
 6. The device of claim 5, wherein: at least one testelectrode of each sub-test circuit is formed over a surface of each ofthe plurality of pick-up heads for contacting with the micro element,and connects to an electrode of the micro element electrode when thepick-up head array contacts with the micro element.
 7. The device ofclaim 6, wherein each sub-test circuit has a pair of test electrodes. 8.The device of claim 6, wherein the plurality of sub-test circuits sharea test electrode.
 9. The device of claim 6, wherein the test circuitfurther comprises a retractable electrode located on the first surfaceof the substrate, which forms a sub-test circuit together with the testelectrode formed over the surface of the pick-up head for contactingwith the micro element.
 10. The device of claim 9, wherein the substratehas a through-hole structure; the test circuit passes through thethrough-hole structure and extends to the second surface of thesubstrate.
 11. The device of claim 10, wherein the substrate is a Sisubstrate, and the test circuit comprises a CMOS integrated circuitformed by a portion of the Si substrate.
 12. The device of claim 11,wherein the CMOS integrated circuit comprises a structure layer formedover the substrate.
 13. The device of claim 5, wherein the pick-up headarray comprises a series of suction nozzle arrays configured to attachor release the micro element through vacuum pressure.
 14. The device ofclaim 13, wherein: the transfer device further comprises a cavity, aplurality of vacuum paths and a switch component; the suction nozzlearray is connected to the cavity via a plurality of the vacuum paths,and valves are set at the connection place for switching on/off; and theswitch component is configured to control on or off of the valve of eachvacuum path so that the suction nozzle is controlled to absorb orrelease required micro element through vacuum pressure.
 15. The deviceof claim 14, wherein: the switch component comprises a CMOS integratedcircuit and an address electrode array connected to the CMOS integratedcircuit; and each vacuum path valve corresponds to the address electrodearray.
 16. The device of claim 15, wherein: the valve is a movablemember; and the address electrode array is under selective excitation bythe CMOS integrated circuit with voltage potential to generateelectrostatic attraction, through which, corresponding movable memberwould deflect or approach to corresponding address electrode, thuscontrolling opening or closing of each vacuum path.
 17. The device ofclaim 14, wherein: the vacuum path is a series of micro-hole structurespassing through the base substrate; and one end is connected to thecavity, and the other is connected to the suction nozzle.
 18. A methodof transferring the micro element with the device according to claim 1,the method comprising: positioning the transfer device on the microelement over a carrier substrate; and contacting the test electrode ofthe transfer device with the micro element electrode to apply a testvoltage on the test circuit to form a test hoop for testing the microelement and obtaining defect pattern of the micro element of the carriersubstrate.
 19. The transfer method of claim 18, further comprising:using the pick-up array of the transfer device to pick up qualifiedmicro elements on the carrier substrate; releasing micro elements on anacceptor substrate.
 20. The transfer method of claim 18, furthercomprising: using the pick-up array of the transfer device to pick upunqualified micro elements on the carrier substrate; releasingunqualified micro elements on the acceptor substrate.